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1-D memristor networks as ternary storage cells
Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors as means to to create voltage-controlled ternary memristive switches. We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties.
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
Memristors
Memristors
Resistive switching
Resistive RAM
Neuromprphic
Mult-bit storage
Ternaru logic
Memristor network
Semiconductors de commutació
info:eu-repo/semantics/submittedVersion
info:eu-repo/semantics/conferenceObject
Institute of Electrical and Electronics Engineers (IEEE)
         

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