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Título:	Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor
Autor/a:	Vilà i Arbonès, Anna Maria; Gómez, A.; Portilla, L.; Morante i Lleonart, Joan Ramon
Otros autores:	Universitat de Barcelona
Abstract:	Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility N2 cm2 /Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs.
Materia(s):	-Indi (Metall) -Gal·li -Pel·lícules fines -Transistors -Semiconductors -Indium -Gallium -Thin films -Transistors -Semiconductors
Derechos:	(c) Elsevier B.V., 2014
Tipo de documento:	Artículo Artículo - Versión aceptada
Editor:	Elsevier B.V.
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