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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Macía Santamaría, Javier |
dc.contributor.author | Martín, E. |
dc.contributor.author | Pérez Rodríguez, Alejandro |
dc.contributor.author | Jiménez, J. |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.contributor.author | Aspar, Bernard |
dc.contributor.author | Margail, Jacques |
dc.date | 2012-05-03T06:35:37Z |
dc.date | 2012-05-03T06:35:37Z |
dc.date | 1997-10-15 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 118602 |
dc.identifier.uri | http://hdl.handle.net/2445/24785 |
dc.format | 6 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365735 |
dc.relation | Journal of Applied Physics, 1997, vol. 82, núm. 8, p. 3730-3735 |
dc.relation | http://dx.doi.org/10.1063/1.365735 |
dc.rights | (c) American Institute of Physics, 1997 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Cristal·lografia |
dc.subject | Superfícies (Física) |
dc.subject | Crystallography |
dc.subject | Surfaces (Physics) |
dc.title | Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |