Title:
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Structure of 60° dislocations at the GaAs/Si interface
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Author:
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Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland
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Other authors:
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Universitat de Barcelona |
Abstract:
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High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations. |
Subject(s):
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-Microscòpia electrònica -Feixos moleculars -Electron microscopy -Molecular beams |
Rights:
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(c) American Institute of Physics, 1996
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Document type:
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Article Article - Published version |
Published by:
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American Institute of Physics
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