dc.contributor.author |
Ariño-Estrada, Gerard |
dc.contributor.author |
Chmeissani, Mokhtar |
dc.contributor.author |
De Lorenzo, Gianluca |
dc.contributor.author |
Kolstein, Machiel |
dc.contributor.author |
Puigdengoles, Carles |
dc.contributor.author |
García, J. |
dc.contributor.author |
Cabruja i Casas, Enric |
dc.date |
2014 |
dc.date.accessioned |
2022-10-31T08:02:32Z |
dc.date.available |
2022-10-31T08:02:32Z |
dc.date.issued |
2022-10-31 |
dc.identifier |
https://ddd.uab.cat/record/254327 |
dc.identifier |
urn:10.1088/1748-0221/9/12/C12032 |
dc.identifier |
urn:oai:ddd.uab.cat:254327 |
dc.identifier |
urn:pmcid:PMC4340550 |
dc.identifier |
urn:pmc-uid:4340550 |
dc.identifier |
urn:pmid:25729405 |
dc.identifier |
urn:oai:pubmedcentral.nih.gov:4340550 |
dc.identifier |
urn:articleid:17480221v9C12032 |
dc.identifier.uri |
http://hdl.handle.net/2072/526079 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
European Commission 250207 |
dc.relation |
Ministerio de Economía y Competitividad SO-2012-0234 |
dc.relation |
Journal of instrumentation ; Vol. 9 (Dec. 2014), art. C12032 |
dc.rights |
open access |
dc.rights |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
dc.rights |
https://creativecommons.org/licenses/by/4.0/ |
dc.subject |
Solid state detectors |
dc.subject |
Charge transport and multiplication in solid media |
dc.subject |
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) |
dc.title |
Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode |
dc.type |
Article |
dc.description.abstract |
We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data. |