dc.contributor.author |
Zhao, Wenbo |
dc.contributor.author |
Kim, Jieun |
dc.contributor.author |
Huang, Xiaoxi |
dc.contributor.author |
Zhang, Lei |
dc.contributor.author |
Pesquera, David |
dc.contributor.author |
Velarde, Gabriel A. P. |
dc.contributor.author |
Gosavi, Tanay |
dc.contributor.author |
Lin, Chia-Ching |
dc.contributor.author |
Nikonov, Dmitri E. |
dc.contributor.author |
Li, Hai |
dc.contributor.author |
Young, Ian A. |
dc.contributor.author |
Ramesh, Ramamoorthy |
dc.contributor.author |
Martin, Lane W. |
dc.date |
2021 |
dc.date.accessioned |
2022-10-30T16:04:28Z |
dc.date.available |
2022-10-30T16:04:28Z |
dc.date.issued |
2022-10-30 |
dc.identifier |
https://ddd.uab.cat/record/251001 |
dc.identifier |
urn:10.1002/adfm.202105068 |
dc.identifier |
urn:oai:ddd.uab.cat:251001 |
dc.identifier |
urn:scopus_id:85109356606 |
dc.identifier |
urn:articleid:16163028v31n40p2105068 |
dc.identifier |
urn:icn2uab:6522026 |
dc.identifier.uri |
http://hdl.handle.net/2072/524634 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
European Commission 79712 |
dc.relation |
Advanced functional materials ; Vol. 31, issue 40 (Oct. 2021), art. 2105068 |
dc.rights |
open access |
dc.rights |
Tots els drets reservats. |
dc.rights |
https://rightsstatements.org/vocab/InC/1.0/ |
dc.subject |
Anomalous Hall effect |
dc.subject |
Magnetoelectric coupling |
dc.subject |
Multiferroic heterostructures |
dc.subject |
Nonvolatile |
dc.subject |
Piezo-strain effect |
dc.title |
Low-voltage magnetoelectric coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin-film heterostructures |
dc.type |
Article |
dc.description.abstract |
The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low-voltage control of magnetism in 30 nm FeRh/100 nm 0.68PbMgNbO-0.32PbTiO (PMN-PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain-induced changes in the FeRh mediated by voltages applied to the PMN-PT. We describe approaches to achieve high-quality, epitaxial growth of FeRh on the PMN-PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin-film devices via studies of the anomalous Hall effect. By comparing the spin-flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10 s m at 325 K while applying a −0.75 V bias. |