dc.contributor.author |
Garbayo, Íñigo |
dc.contributor.author |
Chiabrera, Francesco Maria |
dc.contributor.author |
Alayo Bueno, Nerea |
dc.contributor.author |
Santiso, José |
dc.contributor.author |
Morata, Alex |
dc.contributor.author |
Tarancón Rubio, Albert |
dc.date |
2019 |
dc.identifier |
https://ddd.uab.cat/record/222269 |
dc.identifier |
urn:10.1039/c9ta07632h |
dc.identifier |
urn:oai:ddd.uab.cat:222269 |
dc.identifier |
urn:scopus_id:85075268893 |
dc.identifier |
urn:articleid:20507496v7n45p25772 |
dc.identifier |
urn:wos_id:000509471800047 |
dc.identifier |
urn:altmetric_id:66568435 |
dc.identifier |
urn:icn2uab:6118814 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-1421 |
dc.relation |
European Commission 681146 |
dc.relation |
Journal of materials chemistry ; Vol. 7, Issue 45 (December 2019), p. 25772-25778 |
dc.rights |
open access |
dc.rights |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. |
dc.rights |
https://creativecommons.org/licenses/by-nc/4.0/ |
dc.subject |
Bismuth vanadates |
dc.subject |
Conduction properties |
dc.subject |
Near room temperature |
dc.subject |
Oxide ionic conductors |
dc.subject |
Oxygen partial pressure |
dc.subject |
Poor stability |
dc.subject |
Solid-state electrochemical devices |
dc.subject |
Thin film oxides |
dc.title |
Thin film oxide-ion conducting electrolyte for near room temperature applications |
dc.type |
Article |
dc.description.abstract |
Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 °C. Here, we however unveil the possibility of using BiVCuO at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range. |