dc.contributor.author |
Dettori, Riccardo |
dc.contributor.author |
Melis, Claudio |
dc.contributor.author |
Cartoixà Soler, Xavier |
dc.contributor.author |
Rurali, Riccardo |
dc.contributor.author |
Colombo, Luciano |
dc.date |
2016 |
dc.identifier |
https://ddd.uab.cat/record/204838 |
dc.identifier |
urn:10.1080/23746149.2016.1175317 |
dc.identifier |
urn:oai:ddd.uab.cat:204838 |
dc.identifier |
urn:scopus_id:84994844001 |
dc.identifier |
urn:articleid:23746149v1n2p246 |
dc.identifier |
urn:wos_id:000398353500005 |
dc.identifier |
urn:oai:egreta.uab.cat:publications/eed16b66-acaa-4694-ac07-0c9c8a89bd83 |
dc.identifier |
urn:icn2uab:6227778 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
Ministerio de Economía y Competitividad FIS2012-37549-C05-02 |
dc.relation |
Ministerio de Economía y Competitividad MAT2013-40581-P |
dc.relation |
Ministerio de Economía y Competitividad TEC2012-31330 |
dc.relation |
Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R |
dc.relation |
Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-301 |
dc.relation |
Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384 |
dc.relation |
Ministerio de Economía y Competitividad SEV-2013-0295 |
dc.relation |
Ministerio de Economía y Competitividad SEV-2015-0496 |
dc.relation |
Advances in Physics: X ; Vol. 1, Issue 2 (May 2016), p. 246-261 |
dc.rights |
open access |
dc.rights |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
dc.rights |
https://creativecommons.org/licenses/by/4.0/ |
dc.subject |
Heat transport |
dc.subject |
Thermal conductivity |
dc.subject |
Thermal boundary resistance |
dc.subject |
Semiconductor interfaces |
dc.subject |
Atomistic simulations |
dc.title |
Thermal boundary resistance in semiconductors by non-equilibrium thermodynamics |
dc.type |
Article |
dc.description.abstract |
We critically address the problem of predicting the thermal boundary resistance at the interface between two semiconductors by atomistic simulations. After reviewing the available models, lattice dynamics calculations and molecular dynamics simulation protocols, we reformulate this problem in the language of non-equilibrium thermodynamics, providing an elegant, robust and valuable theoretical framework for the direct calculation of the thermal boundary resistance through molecular dynamics simulations. The foundation of the method, as well as its subtleties and the details of its actual implementation are presented. Finally, the Si/Ge interface showcase is discussed as the prototypical example of semiconductor heterojunction whose thermal properties are paramount in many front-edge nanotechnologies. |