Monitoring defects in III-V materials : a nanoscale CAFM study

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Title:	Monitoring defects in III-V materials : a nanoscale CAFM study
Author:	Iglesias, V.; Wu, Q.; Porti i Pujal, Marc; Nafría i Maqueda, Montserrat; Bersuker, G.; Cordes, A.
Abstract:	The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. In this study, the CAFM technique is employed for identification and analysis of nanoscale defects, in particular, Threading Dislocations (TD), Stacking faults (SF) and Anti-phase Boundaries (APB), in III-V materials grown over silicon wafers.
Subject(s):	-High mobility substrates -III-V semiconductors -Threading dislocations -CAFM
Rights:	open access Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. https://creativecommons.org/licenses/by-nc-nd/3.0/
Document type:	Article
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Uri:	https://ddd.uab.cat/record/136896