dc.contributor.author |
Marconcini, Paolo |
dc.contributor.author |
Cresti, Alessandro |
dc.contributor.author |
Roche, Stephan |
dc.date |
2018 |
dc.identifier |
https://ddd.uab.cat/record/203040 |
dc.identifier |
urn:10.3390/ma11050667 |
dc.identifier |
urn:oai:ddd.uab.cat:203040 |
dc.identifier |
urn:pmid:29693612 |
dc.identifier |
urn:scopus_id:85046289147 |
dc.identifier |
urn:articleid:19961944v11n5p667 |
dc.identifier |
urn:wos_id:000434711700017 |
dc.identifier |
urn:altmetric_id:40060744 |
dc.identifier |
urn:oai:egreta.uab.cat:publications/b059cff0-6efc-493c-93d5-777e0b890b64 |
dc.identifier |
urn:pmc-uid:5978044 |
dc.identifier |
urn:pmcid:PMC5978044 |
dc.identifier |
urn:oai:pubmedcentral.nih.gov:5978044 |
dc.identifier |
urn:icn2uab:6030730 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
Materials ; Vol. 11, issue. 5 (April 2018), art. 667 |
dc.rights |
open access |
dc.rights |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
dc.rights |
https://creativecommons.org/licenses/by/4.0/ |
dc.subject |
ION/IOFF ratio |
dc.subject |
Boron doping |
dc.subject |
Channel length |
dc.subject |
Graphene ribbon |
dc.subject |
Mobility gap |
dc.subject |
Transistor |
dc.subject |
Transport |
dc.title |
Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons |
dc.type |
Article |
dc.description.abstract |
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior. |