The work at University of WisconsinMadison was supported by NSF Grant DMR-1234096 and AFOSR grant FA9550-12-1-0342. G.C. acknowledges financial support from a European Research Council (ERC) Starting Grant and the Severo Ochoa programme.

In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAIO₃ and SrTiO₃ is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAIO₃ SrTiO₃ (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.