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dc.contributor.author | Farjas Silva, Jordi |
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dc.contributor.author | Rath, Chandana |
dc.contributor.author | Pinyol i Agelet, Albert |
dc.contributor.author | Roura Grabulosa, Pere |
dc.contributor.author | Bertrán Serra, Enric |
dc.date | 2005 |
dc.date.accessioned | 2011-02-15T16:23:32Z |
dc.date.available | 2011-02-15T16:23:32Z |
dc.date.issued | 2011-02-15T16:23:32Z |
dc.identifier.citation | Farjas Silva, J., Rath, Ch., Pinyol i Agelet, A., Roura i Grabulosa, P., i Bertran, E. (2005). Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation. Applied Physics Letters, 87 (19), 192114. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v87/i19/p192114_s1 |
dc.identifier.citation | 1077-3118 (versió electrònica) |
dc.identifier.citation | 0003-6951 (versió paper) |
dc.identifier.citation | http://dx.doi.org/10.1063/1.2130380 |
dc.identifier.uri | http://hdl.handle.net/10256/3212 |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2130380 |
dc.relation | © Applied Physics Letters, 2005, vol. 87, núm. 19 |
dc.relation | Articles publicats (D-F) |
dc.rights | Tots els drets reservats |
dc.subject | Materials nanoestructurals |
dc.subject | Nanopartícules |
dc.subject | Nitrurs |
dc.subject | Semiconductors |
dc.subject | Silici -- Compostos |
dc.subject | Silici -- Oxidació |
dc.subject | Nanoparticles |
dc.subject | Nanostructure materials |
dc.subject | Nitrides |
dc.subject | Silicon -- Oxidation |
dc.subject | Silicon compounds |
dc.title | Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |