Título:
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Determination of the electron density in GaAs/AlxGa1-xAs heterostructures
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Autor/a:
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Martorell Domenech, Juan; Sprung, Donald W. L.
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Otros autores:
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Universitat de Barcelona |
Abstract:
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An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density,
σ
−
. A suitable linear approximation is found that provides simple and accurate analytic expressions for
σ
−
in terms of the physical parameters of the device. |
Materia(s):
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-Electrònica quàntica -Física de l'estat sòlid -Quantum electronics -Solid state physics |
Derechos:
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(c) The American Physical Society, 1994
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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The American Physical Society
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Compartir:
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