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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Pellegrino, Paolo |
dc.contributor.author | Leveque, P. |
dc.contributor.author | Hallen, A. |
dc.contributor.author | Lalita, J. |
dc.contributor.author | Jagadish, C. (Chennupati) |
dc.contributor.author | Svensson, Bengt G. |
dc.date | 2009-12-28T11:21:30Z |
dc.date | 2009-12-28T11:21:30Z |
dc.date | 2001 |
dc.identifier.citation | 0163-1829 |
dc.identifier.citation | 521835 |
dc.identifier.uri | http://hdl.handle.net/2445/10599 |
dc.format | 10 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | The American Physical Society |
dc.relation | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.64.195211 |
dc.relation | Physical Review B, 2001, vol. 64, núm. 19, p. 195211-195221 |
dc.relation | http://dx.doi.org/10.1103/PhysRevB.64.195211 |
dc.rights | (c) The American Physical Society, 2001 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Microelectrònica |
dc.subject | Dispositius magnètics |
dc.subject | Microelectronics |
dc.subject | Magnetic devices |
dc.title | Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |