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Title:	Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys
Author:	Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3¿cm¿s-1 and 2¿cm¿s-1 on 1¿O¿cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Solar cells -Silicon -Passivation -Silicon carbide -Crystalline solar cells -Amorphous silicon -Antireflective -Phosphorus doped -Thermal stress -Cèl·lules solars -Silici
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Document type:	Article - Published version Article
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