Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Mora-Seró, I
dc.contributor.author	Luo, Y
dc.contributor.author	Garcia Belmonte, G
dc.contributor.author	Bisquert, J
dc.contributor.author	Muñoz Cervantes, Delfina
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Alcubilla González, Ramón
dc.date	2007-12
dc.identifier.citation	Mora-Seró, I., Luo, Y., Garcia-Belmonte, G., Bisquert, J., Muñoz, D., Voz, C., Puigdollers, J., Alcubilla, R. Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under. "Solar energy materials and solar cells", Desembre 2007, vol. 928, núm. 4, p. 505-509.
dc.identifier.citation	0927-0248
dc.identifier.citation	10.1016/j.solmat.2007.11.005
dc.identifier.uri	http://hdl.handle.net/2117/118012
dc.language.iso	eng
dc.relation	https://www.sciencedirect.com/science/article/pii/S0927024807004230
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject	Solar cells
dc.subject	Heterojunction solar cell
dc.subject	Impedance spectroscopy
dc.subject	SRH recombination
dc.subject	Effective lifetime
dc.subject	Cèl·lules solars
dc.title	Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent circuits. Shockley–Read–Hall recombination at states on the device interfaces governs the cell dynamic response. Recombination process was modeled by means of simple RC circuits which allow to determine the capture rate of electrons and holes. Carrier lifetime is found to be stated by the electron capture time tSRH˜tn, and it results in the range of 300 µs. The Al-annealed back contact was regarded as the dominating recombination interface.
dc.description.abstract	Peer Reviewed

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