Título:
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Copper phthalocyanine thin filma transistors with polymeric gate dielectric
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Autor/a:
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Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by thermal evaporation in a high vacuum system. The maximum process temperature achieved was 100 °C, corresponding to the baking of the PMMA. The devices showed satisfactory p-type electrical characteristics with field-effect mobility and threshold voltage values around 0.2 × 10-4 cm2 V-1 s-1 and 6 V, respectively. The device electrical characteristics were correlated with the structural and morphological properties of the CuPc thin-films. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Transistors -Thin film transistors -Polymers and organics -Transistors |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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