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Título:	N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers
Autor/a:	Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I; Alcubilla González, Ramón
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus diffusions were performed using solid planar diffusion sources without employing any drive-in step. Stacks of two SiCx layers were deposited by plasma enhanced chemical vapor deposition: first a thin silicon rich layer with excellent passivating properties and then an antireflective carbon rich layer. The thickness of the passivating layer was optimized, reaching a trade-off between the better passivation achieved for thicker layers and the increased light absorption within the layer, which reduced the photocurrent. The surface recombination velocity and the optical losses were determined for each configuration and used to calculate photovoltaic conversion efficiency limits for 50 and 90O/sq emitters. In both cases, optimum configuration is for the stacks with passivating layers that are about 8nm thick.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Diffusion -Doping -Silicon -Current density -Optical constants -Public address systems -Carbides -Surface passivation -Passivation -Plasma chemical vapor deposition -Cèl·lules solars
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Tipo de documento:	Artículo - Versión publicada Artículo
Editor:	American Institute of Physics (AIP)
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