Títol:
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Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
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Autor/a:
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Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón
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Altres autors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a physical model to calculate the interface recombination rate under illumination. This model calculates the effective lifetime teff as a function of the average excess minority carrier concentration¿¿n¿. In order to test the model, we prepared a set of HIT structures. The dependence of teff vs ¿¿n¿ of the samples is measured using the quasi-steady-state photoconductance technique. By fitting our model to the experimental data, we determine the a-Si:H/c-Siinterface parameters and the doping density of the amorphous layer. |
Abstract:
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Peer Reviewed |
Matèries:
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Cèl·lules solars |
Drets:
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Tipus de document:
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Article - Versió publicada Article |
Publicat per:
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American Institute of Physics (AIP)
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Compartir:
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