Títol:
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
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Autor/a:
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Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón
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Altres autors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s. |
Matèries:
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -c-Si -3D simulations -black-silicon -IBC solar cell -point-like contacts -surface passivation -Cèl·lules solars -Bateries solars |
Drets:
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Tipus de document:
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Article - Versió presentada Objecte de conferència |
Publicat per:
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WIP Renewable Energies
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