Título:
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Pentacene thin-film transistors with polymeric gate dielectric
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Autor/a:
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Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These devices presented good electrical performances with field-effect mobilities of 0.01 cm2 V-1 s-1 and low threshold voltages (-15 V). Atomic force microscopy studies reveal that the microstructure of pentacene layers is strongly conditioned by the surface morphology of the dielectric. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Thin films -Pentacene -PMMA -Thin-film transistors -Capes fines |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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