To access the full text documents, please follow this link: http://hdl.handle.net/2117/106157
dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
---|---|
dc.contributor | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.contributor.author | Crespo Yepes, Albert |
dc.contributor.author | Barajas Ojeda, Enrique |
dc.contributor.author | Martin Martínez, Javier |
dc.contributor.author | Mateo Peña, Diego |
dc.contributor.author | Aragonès Cervera, Xavier |
dc.contributor.author | Rodríguez Martínez, Rosana |
dc.contributor.author | Nafría Maqueda, Montserrat |
dc.date | 2017-06-25 |
dc.identifier.citation | Crespo, A., Barajas, E., Martin, J., Mateo, D., Aragones, X., Rodríguez, R., Nafría, M. MOSFET degradation dependence on input signal power in a RF power amplifier. "Microelectronic engineering", 25 Juny 2017, vol. 178, p. 289-292. |
dc.identifier.citation | 0167-9317 |
dc.identifier.citation | 10.1016/j.mee.2017.05.021 |
dc.identifier.uri | http://hdl.handle.net/2117/106157 |
dc.language.iso | eng |
dc.relation | http://www.sciencedirect.com/science/article/pii/S0167931717302186 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject | Metal oxide semiconductor field-effect transistors |
dc.subject | Metal oxide semiconductors |
dc.subject | CMOS |
dc.subject | MOSFET degradation |
dc.subject | RF power amplifier |
dc.subject | RF stress |
dc.subject | Aging |
dc.subject | Transistors MOSFET |
dc.subject | Semiconductors |
dc.subject | Metall-òxid-semiconductors complementaris |
dc.subject | Metall-òxid-semiconductors |
dc.title | MOSFET degradation dependence on input signal power in a RF power amplifier |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |