Insights to memristive memory cell from a reliability perspective

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	Pouyan, Peyman
dc.contributor.author	Amat Bertran, Esteve
dc.contributor.author	Rubio Sola, Jose Antonio
dc.date	2015
dc.identifier.citation	Pouyan, P., Amat, E., Rubio, A. Insights to memristive memory cell from a reliability perspective. A: International Conference on Memristive Systems. "MEMRISYS 2015 - International Conference on Memristive Systems". Paphos: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1-2.
dc.identifier.citation	9781467392099
dc.identifier.citation	10.1109/MEMRISYS.2015.7378382
dc.identifier.uri	http://hdl.handle.net/2117/104851
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7378382
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Memristors
dc.subject	Durability
dc.subject	Random access storage
dc.subject	Reconfigurable hardware
dc.subject	Reliability – RRAM
dc.subject	crossbar
dc.subject	Emerging device
dc.subject	Memristor
dc.subject	Process variability
dc.subject	reconfiguration
dc.subject	Ordinadors -- Memòries semiconductores
dc.title	Insights to memristive memory cell from a reliability perspective
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability.
dc.description.abstract	Peer Reviewed

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