Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	Nunes Cavalheiro, David Manuel
dc.contributor.author	Moll Echeto, Francisco de Borja
dc.contributor.author	Valtchev, Stanimir
dc.date	2017-03-01
dc.identifier.citation	Nunes, D., Moll, F., Valtchev, S. Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications. "IEEE transactions on very large scale integration (VLSI) systems", 1 Març 2017, vol. 25, núm. 3, p. 988-997.
dc.identifier.citation	1063-8210
dc.identifier.citation	10.1109/TVLSI.2016.2617203
dc.identifier.uri	http://hdl.handle.net/2117/102943
dc.language.iso	eng
dc.relation	http://ieeexplore.ieee.org/document/7725525/
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject	Field-effect transistors
dc.subject	Charge pump
dc.subject	energy harvesting
dc.subject	passive rectifier
dc.subject	thermogenerator
dc.subject	tunnel field-effect transistor (TFET)
dc.subject	ultralow power
dc.subject	Transistors d'efecte de camp
dc.title	Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic technologies, the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency of front-end charge pumps and rectifiers powered at sub-µW power levels. However, under reverse bias conditions the TFET device presents particular electrical characteristics due to its different carrier injection mechanism. In this paper, it is shown that reverse losses in TFET-based circuits can be attenuated by changing the gate-to-source voltage of reverse-biased TFETs. Therefore, in order to take full advantage of the TFETs in front-end energy harvesting circuits, different circuit approaches are required. In this paper, we propose and discuss different topologies for TFET-based charge pumps and rectifiers for energy harvesting applications.
dc.description.abstract	Peer Reviewed

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