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Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Cifre, J.; Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Polo Trasancos, Ma. del Carmen; Andreu i Batallé, Jordi; Lloret, A.
Universitat de Barcelona
Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.
Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
(c) Springer Verlag, 1994
Article
info:eu-repo/semantics/acceptedVersion
Springer Verlag
         

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