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Título:
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Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
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Autor/a:
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Breymesser, A.; Schlosser, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Summhammer, J.
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode. |
Materia(s):
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-Silici -Deposició química en fase vapor -Cèl·lules solars -Silicon -Chemical vapor deposition -Solar cells |
Derechos:
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(c) Elsevier B.V., 2001
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Tipo de documento:
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Artículo Artículo - Versión aceptada |
Editor:
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Elsevier B.V.
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