High efficiency interdigitated back-contact c-Si solar cells

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RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/85295

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Calle Martín, Eric
dc.contributor.author	Ortega Villasclaras, Pablo Rafael
dc.contributor.author	López Rodríguez, Gema
dc.contributor.author	Martín García, Isidro
dc.contributor.author	Carrió Díaz, David
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Alcubilla González, Ramón
dc.date	2015
dc.identifier.citation	Calle, E., Ortega, P., Lopez, G., Martin, I., Carrió, D., Voz, C., Orpella, A., Puigdollers, J., Alcubilla, R. High efficiency interdigitated back-contact c-Si solar cells. A: Spanish Conference on Electron Devices. "2015 10th Spanish Conference on Electron Devices (CDE 2015): Aranjuez-Madrid, Spain: 11-13 February 2015". Madrid: Institute of Electrical and Electronics Engineers (IEEE), 2015.
dc.identifier.citation	9781479981090
dc.identifier.citation	10.1109/CDE.2015.7087509
dc.identifier.uri	http://hdl.handle.net/2117/85295
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject	Solar cells
dc.subject	Atomic layer deposition
dc.subject	back-contact
dc.subject	crystalline silicon
dc.subject	passivation
dc.subject	solar cells
dc.subject	Bateries solars
dc.subject	Cèl·lules solars
dc.title	High efficiency interdigitated back-contact c-Si solar cells
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with front surface passivation using atomic layer deposited Al2O3 films on textured surfaces with random pyramids. Very low reflectance with outstanding surface recombination velocity values around 3 cm/s are achieved in our precursors. Fabricated solar cells reach efficiencies up to 20.3% (AM1.5G 1 kW/m2, T=25°C), with short circuit density Jsc, open circuit voltage Voc and fill factor FF of 40.6 mA/cm2, 648 mV and 77.2% respectively.

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