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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.contributor.author | Nunes Cavalheiro, David Manuel |
dc.contributor.author | Moll Echeto, Francisco de Borja |
dc.contributor.author | Valtchev, Stanimir |
dc.date | 2015 |
dc.identifier.citation | Nunes, D., Moll, F., Valtchev, S. Novel charge pump converter with Tunnel FET devices for ultra-low power energy harvesting sources. A: IEEE International Midwest Symposium on Circuits and Systems. "Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on". Fort Collins: Institute of Electrical and Electronics Engineers (IEEE), 2015. |
dc.identifier.citation | 10.1109/MWSCAS.2015.7282034 |
dc.identifier.uri | http://hdl.handle.net/2117/85311 |
dc.description.abstract | Compared to conventional technologies, the superior electrical characteristics of III-V Tunnel FET (TFET) devices can highly improve the process of energy harvesting conversion at ultra-low input voltage operation (sub-0.25V). In order to extend the input voltage/power range of operation in conventional charge pump topologies with TFET devices, it is of the major importance to reduce the band-to-band tunneling current when the transistor is under reverse bias conditions. This paper proposes a new charge pump topology with TFET devices that attenuate the reverse losses, thus improving the power conversion efficiency (PCE) in a broader range of input voltage values and output loads. It is shown by simulations that compared with the conventional gate cross-coupled charge pump and considering an input voltage of 640 mV, the proposed topology reduces the reverse losses from 19 % to 1 %, for an output current of 10 µA. For this case, the PCE increased from 63 % to 83 %. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.relation | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7282034&isnumber=7281994 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Àrees temàtiques de la UPC::Energies::Termoenergètica |
dc.subject | Thermoelectricity |
dc.subject | charge pump circuits |
dc.subject | energy harvesting |
dc.subject | field effect transistors |
dc.subject | power conversion |
dc.subject | III-V tunnel FET devices |
dc.subject | PCE |
dc.subject | band-to-band tunneling current |
dc.subject | charge pump converter |
dc.subject | current 10 muA |
dc.subject | power conversion efficiency |
dc.subject | ultra-low power energy harvesting sources |
dc.subject | voltage 640 mV |
dc.subject | Capacitors |
dc.subject | Charge pumps |
dc.subject | Field effect transistors |
dc.subject | Logic gates |
dc.subject | Power conversion |
dc.subject | Topology |
dc.subject | Charge Pump |
dc.subject | Energy Harvesting |
dc.subject | Switched-Capacitor |
dc.subject | Thermo-generator |
dc.subject | Tunnel FET |
dc.subject | Ultra-Low Power |
dc.subject | Termoelectricitat |
dc.title | Novel charge pump converter with Tunnel FET devices for ultra-low power energy harvesting sources |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/conferenceObject |