Title:
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Novel charge pump converter with Tunnel FET devices for ultra-low power energy harvesting sources
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Author:
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Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Compared to conventional technologies, the superior electrical characteristics of III-V Tunnel FET (TFET) devices can
highly improve the process of energy harvesting conversion at ultra-low input voltage operation (sub-0.25V). In order to extend the
input voltage/power range of operation in conventional charge pump topologies with TFET devices, it is of the major importance to
reduce the band-to-band tunneling current when the transistor is under reverse bias conditions. This paper proposes a new charge
pump topology with TFET devices that attenuate the reverse losses, thus improving the power conversion efficiency (PCE) in a broader
range of input voltage values and output loads. It is shown by simulations that compared with the conventional gate cross-coupled
charge pump and considering an input voltage of 640 mV, the proposed topology reduces the reverse losses from 19 % to 1 %, for an
output current of 10 µA. For this case, the PCE increased from 63 % to 83 %. |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica -Àrees temàtiques de la UPC::Energies::Termoenergètica -Thermoelectricity -charge pump circuits -energy harvesting -field effect transistors -power conversion -III-V tunnel FET devices -PCE -band-to-band tunneling current -charge pump converter -current 10 muA -power conversion efficiency -ultra-low power energy harvesting sources -voltage 640 mV -Capacitors -Charge pumps -Field effect transistors -Logic gates -Power conversion -Topology -Charge Pump -Energy Harvesting -Switched-Capacitor -Thermo-generator -Tunnel FET -Ultra-Low Power -Termoelectricitat |
Rights:
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Document type:
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Article - Published version Conference Object |
Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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