Efficiency comparison between SiC- and Si-based active neutral-point clamped converters

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/28094

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Escola Tècnica Superior d'Enginyeria Industrial de Barcelona
dc.contributor	Universitat Politècnica de Catalunya. GREP - Grup de Recerca en Electrònica de Potència
dc.contributor.author	Nicolás Apruzzese, Joan
dc.contributor.author	Maset, Enrique
dc.contributor.author	Busquets Monge, Sergio
dc.contributor.author	Esteve, Vicente
dc.contributor.author	Bordonau Farrerons, José
dc.contributor.author	Calle Prado, Alejandro
dc.contributor.author	Jordán, José
dc.date	2015
dc.identifier.citation	Nicolas, J. [et al.]. Efficiency comparison between SiC- and Si-based active neutral-point clamped converters. A: IEEE International Conference on Industrial Technology. "ICIT 2015 - International Conference on Industrial Technology". Sevilla: 2015, p. 3058-3063.
dc.identifier.citation	978-1-4799-7799-4
dc.identifier.uri	http://hdl.handle.net/2117/28094
dc.language.iso	eng
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Metal oxide semiconductors
dc.subject	Metal oxide semiconductor field-effect transistors
dc.subject	SiC technology
dc.subject	SiC MOSFET
dc.subject	wide band gap
dc.subject	active neutral-point clamped
dc.subject	efficiency
dc.subject	multilevel conversion
dc.subject	Transistors
dc.subject	Metall-òxid-semiconductors
dc.subject	Transistors MOSFET
dc.title	Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is higher in all the switching-frequency range.

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