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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
dc.contributor.author | Balcells Sendra, Josep |
dc.contributor.author | Mon González, Juan |
dc.contributor.author | Lamich Arocas, Manuel |
dc.contributor.author | Laguna, Alberto |
dc.date | 2014 |
dc.identifier.citation | Balcells, J. [et al.]. Improvement of driver to gate coupling circuits for SiC MOSFETS. A: IEEE International Symposium on Industrial Electronics. "IEEE 23rd International Symposium on Industrial Electronics (ISIE 2014): 1-4 June 2014: Grand Cevahir Hotel and Convention Center, Istanbul, Turkey: proceedings". Istanbul: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 521-525. |
dc.identifier.citation | 978-1-4799-2400-4 |
dc.identifier.citation | 10.1109/ISIE.2014.6864667 |
dc.identifier.uri | http://hdl.handle.net/2117/26763 |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Electric current converters |
dc.subject | Electric currents |
dc.subject | Driver circuits |
dc.subject | SiC MOSFET |
dc.subject | Power Losses |
dc.subject | Conducted EMI |
dc.subject | DC-DC converters |
dc.subject | Convertidors de corrent elèctric |
dc.subject | Circuits elèctrics |
dc.title | Improvement of driver to gate coupling circuits for SiC MOSFETS |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/conferenceObject |
dc.description.abstract | |
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