Shape effects on electromigration in VLSI interconnects

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/24195

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	González Jiménez, José Luis
dc.contributor.author	Rubio Sola, Jose Antonio
dc.date	1997-07
dc.identifier.citation	Gonzalez, J.; Rubio, A. Shape effects on electromigration in VLSI interconnects. "Microelectronics reliability", Juliol 1997, vol. 37, núm. 7, p. 1073-1078.
dc.identifier.citation	0026-2714
dc.identifier.citation	10.1016/S0026-2714(96)00269-7
dc.identifier.uri	http://hdl.handle.net/2117/24195
dc.language.iso	eng
dc.relation	http://www.sciencedirect.com/science/article/pii/S0026271496002697
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject	Linear integrated circuits
dc.subject	Circuits integrats lineals
dc.title	Shape effects on electromigration in VLSI interconnects
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	The influence of the shape of VLSI interconnects on the lifetime due to electromigration is investigated. Simulations and experiments indicate that, in some cases, the right angle corners of the metal lines, widely interconnections layout of VLSI circuits, reduce the lifetime of such interconnects. Substitutions by more gradual, smaller angled corners improve electromigration lifetimes.
dc.description.abstract	Peer Reviewed

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