A compact noise model for carbon nanotube FETs

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Title:	A compact noise model for carbon nanotube FETs
Author:	Landauer, Gerhard Martin; González Jiménez, José Luis
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a mínimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF Building blocks.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica -Àrees temàtiques de la UPC::Enginyeria civil::Materials i estructures -Nanotubes -Nanostructured materials -Carbon nanotube -Field-effect transistor -Noise modeling -Radio frequency -Analog -Nanotubs -Materials nanoestructurats
Rights:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
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