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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
dc.contributor.author | Balcells Sendra, Josep |
dc.contributor.author | Bogónez Franco, Francisco |
dc.date | 2013 |
dc.identifier.citation | Balcells, J.; Bogonez, F. Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS. A: International Symposium on Electromagnetic Compatibility. "Proceedings of the 2013 International Symposium on Electromagnetic Compatibility.". Brugge: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 209-214. |
dc.identifier.citation | 978-1-4673-4979-6 |
dc.identifier.citation | IEEE Catalog Number CFP1306F-USB, ISBN 978-1-4673-4979-6 |
dc.identifier.uri | http://hdl.handle.net/2117/20758 |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
dc.subject | Electromagnetic compatibility |
dc.subject | SiC |
dc.subject | EMI |
dc.subject | conducted EMI |
dc.subject | radiated EMI |
dc.subject | Power converters |
dc.subject | Compatibilitat electromagnètica |
dc.title | Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS |
dc.type | info:eu-repo/semantics/submittedVersion |
dc.type | info:eu-repo/semantics/conferenceObject |
dc.description.abstract |