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Title:
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Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS
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Author:
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Balcells Sendra, Josep; Bogónez Franco, Francisco
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
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Abstract:
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This work presents a study of the influence of
different gate driver circuits on the switching behavior and EMI
produced by SiC MOSFET devices used in a boost converter.
The paper includes several simulations of switching behavior
using different VGS voltage levels and different passive RCD
(Resistance Capacitor Diode) circuits to interface the driver to
the SiC MOS gate and several tests of conducted and radiated
EMI for each one of the interface circuits. The paper also
includes a comparison of both aspects (switching and EMI) when
using different gate voltage levels.
The study reveals that gate voltage has little impact on
switching behavior and therefore on conducted and radiated
EMI, while gate RCD coupling circuits have a noticeable impact.
The EMI reduction, when using the adequate driver-gate circuit
may be in the order of 10 dB at certain frequencies in the
conducted band and up to 20 dB for certain frequencies in the
radiated band. |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
-Electromagnetic compatibility
-SiC
-EMI
-conducted EMI
-radiated EMI
-Power converters
-Compatibilitat electromagnètica |
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Rights:
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Document type:
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Article - Submitted version
Conference Object |
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Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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