Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

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RECERCAT Home > Universitat de Barcelona > Física Aplicada > Articles publicats en revistes (Física Aplicada) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/47604

dc.contributor	Universitat de Barcelona
dc.contributor.author	Bertomeu i Balagueró, Joan
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Asensi López, José Miguel
dc.contributor.author	Andreu i Batallé, Jordi
dc.date	2013-11-08T08:06:02Z
dc.date	2013-11-08T08:06:02Z
dc.date	1997
dc.date	2013-11-08T08:06:03Z
dc.identifier.citation	0169-4332
dc.identifier.citation	113130
dc.identifier.uri	http://hdl.handle.net/2445/47604
dc.format	21 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	Elsevier B.V.
dc.relation	Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0169-4332(96)00600-9
dc.relation	Applied Surface Science, 1997, vol. 108, num. 2, p. 211-217
dc.relation	http://dx.doi.org/10.1016/S0169-4332(96)00600-9
dc.rights	(c) Elsevier B.V., 1997
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Espectroscòpia infraroja
dc.subject	Pel·lícules fines
dc.subject	Hidrogen
dc.subject	Semiconductors amorfs
dc.subject	Porositat
dc.subject	Infrared spectroscopy
dc.subject	Thin films
dc.subject	Hydrogen
dc.subject	Amorphous semiconductors
dc.subject	Porosity
dc.title	Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/acceptedVersion
dc.description.abstract	Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.

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