On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

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Title:	On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
Author:	Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
Other authors:	Universitat de Barcelona
Abstract:	This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.
Subject(s):	-Semiconductors amorfs -Optoelectrònica -Espectroscòpia -Silici -Semimetalls -Amorphous semiconductors -Optoelectronics -Spectrum analysis -Silicon -Semimetals
Rights:	(c) Elsevier B.V., 1993
Document type:	Article Article - Accepted version
Published by:	Elsevier B.V.
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