Title:
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Thin Film Transistors obtained by Hot-Wire CVD
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Author:
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Puigdollers i González, Joaquim; Orpella, Albert; Dosev, D.; Voz Sánchez, Cristóbal; Pallarés Curto, Jordi; Marsal Garví, Lluís F. (Lluís Francesc); Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón; Peiró, D.
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Other authors:
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Universitat de Barcelona |
Abstract:
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Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material. |
Subject(s):
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-Silici -Pel·lícules fines -Transistors -Deposició química en fase vapor -Temperatures baixes -Semiconductors amorfs -Silicon -Thin films -Transistors -Chemical vapor deposition -Low temperatures -Amorphous semiconductors |
Rights:
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(c) Elsevier B.V., 2000
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Document type:
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Article Article - Accepted version |
Published by:
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Elsevier B.V.
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