Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

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RECERCAT Home > Universitat de Barcelona > Física Aplicada > Articles publicats en revistes (Física Aplicada) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/47381

dc.contributor	Universitat de Barcelona
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Orpella, Albert
dc.contributor.author	Alcubilla González, Ramón
dc.contributor.author	Dosev, D.
dc.contributor.author	Pallarés Curto, Jordi
dc.contributor.author	Peiró, D.
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Bertomeu i Balagueró, Joan
dc.contributor.author	Andreu i Batallé, Jordi
dc.contributor.author	Marsal Garví, Lluís F. (Lluís Francesc)
dc.date	2013-10-29T15:51:43Z
dc.date	2013-10-29T15:51:43Z
dc.date	2000
dc.date	2013-10-29T15:51:43Z
dc.identifier.citation	0921-5107
dc.identifier.citation	147812
dc.identifier.uri	http://hdl.handle.net/2445/47381
dc.format	8 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	Elsevier B.V.
dc.relation	Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00252-4
dc.relation	Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 526-529
dc.relation	http://dx.doi.org/10.1016/S0921-5107(99)00252-4
dc.rights	(c) Elsevier B.V., 2000
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Silici
dc.subject	Pel·lícules fines
dc.subject	Microelectrònica
dc.subject	Deposició química en fase vapor
dc.subject	Transistors
dc.subject	Semiconductors
dc.subject	Cèl·lules solars
dc.subject	Silicon
dc.subject	Thin films
dc.subject	Microelectronics
dc.subject	Chemical vapor deposition
dc.subject	Transistors
dc.subject	Semiconductors
dc.subject	Solar cells
dc.title	Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/acceptedVersion
dc.description.abstract	Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

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