Carbon nanotube FET process variability and noise model for radiofrequency investigations

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Title:	Carbon nanotube FET process variability and noise model for radiofrequency investigations
Author:	Landauer, Gerhard Martin; González Jiménez, José Luis
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise behavior.
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica -Nanoelectronics. -Field-effect transistors. -TRANSISTORS INCLUDING NONIDEALITIES -COMPACT SPICE MODEL -PART II -PERFORMANCE -Nanotubs -Transistors d'efecte de camp
Rights:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
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