| dc.contributor |
Itoch, Junichi |
| dc.contributor.author |
Rius Rueda, Armand |
| dc.date |
2011 |
| dc.identifier.uri |
http://hdl.handle.net/2099.1/18074 |
| dc.language.iso |
eng |
| dc.publisher |
Universitat Politècnica de Catalunya |
| dc.publisher |
Nagaoka University of Technology |
| dc.rights |
info:eu-repo/semantics/openAccess |
| dc.subject |
Àrees temàtiques de la UPC::Energies::Tecnologia energètica::Sistemes de transformació energètica |
| dc.subject |
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència::Convertidors de corrent elèctric |
| dc.subject |
Electric vehicles -- Power supply |
| dc.subject |
Frequency multipliers |
| dc.subject |
Wireless communication systems |
| dc.subject |
Metal oxide semiconductor field-effect transistor |
| dc.subject |
Electric circuits |
| dc.subject |
Vehicles elèctrics -- Fonts d'alimentació |
| dc.subject |
Multiplicadors de freqüència |
| dc.subject |
Comunicació sense fil, Sistemes de |
| dc.subject |
Transistors MOSFET |
| dc.subject |
Circuits elèctrics |
| dc.title |
Design and implemantation of a resonant gate-drive circuit with capability of high frequency and high efficiency operation |
| dc.type |
info:eu-repo/semantics/bachelorThesis |
| dc.description.abstract |
This document deals with the design and implementation of a resonant gate-drive circuit capable of high frequency and high efficiency operation. This gate-drive circuit is characterized by a resonant inductor connected in series with the gate terminal of a driven MOSFET, forming a series resonant circuit, which enables to charge or discharge the gate to source input capacitance of the transistor with low power consumption.
This circuit aims to be applied in high frequency inverters used in power systems for wireless power transmission. More specifically, the first goal is to make a particular transistor switch at 1MHz. The used transistor must be able to conduct a current on the order of 15.5A, and to be biased with 387V.
Experimentation is carried out without any power circuit connected to the grate-drive circuit, and shorting the drain and source terminals of the driven MOSFET, obtaining satisfactory results of the switching operation at frequencies above 1MHz.
Due to its adequacy with regard to electric vehicle chargers, mentioned wireless power transmission systems consist in magnetic resonance coupling. In this type of circuits, achieving size and weight reductions require high frequency operation, and that is the reason why the Industry-Science-Medical (ISM) frequency band is one of the candidates for this application, in terms of respecting the Standard and improving the size and weight of the circuits. Hence, the final goal of these wireless EV chargers is to operate at a frequency of 13.56MHz.
Using conventional silicon power transistors with a large input capacitance makes difficult achieving that frequency operation, especially when dealing with several kilowatts of power. However, certain frequency multiplying circuits have the capability of achieve high frequencies at the output thanks to an operation combining a multi-phase inverter and a multi-core transformer. The number of phases is equal to the factor of multiplication, so that a frequency of 13.56MHz could be achieved, for example, using five phases and an input frequency of 2.712MHz.
Accordingly, this document also includes considerations about how to reduce the power consumption and how to reach a correct switching operation at a frequency of 2.712MHz |
| dc.description.abstract |
Outgoing |
