Título:
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High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
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Autor/a:
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Gacevic, Zarko; Fernández-Garrido, S.; Rebled, J. M. (José Manuel); Estradé Albiol, Sònia; Peiró Martínez, Francisca; Calleja Pardo, Enrique
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Otros autores:
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Universitat de Barcelona |
Abstract:
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We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution. |
Materia(s):
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-Optoelectrònica -Semiconductors -Estructura cristal·lina (Sòlids) -Indi (Metall) -Optoelectronics -Semiconductors -Layer structure (Solids) -Indium |
Derechos:
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(c) American Institute of Physics , 2011
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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