Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges.

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dc.contributor	Universitat de Barcelona
dc.contributor.author	Andújar Bella, José Luis
dc.contributor.author	Bertran Serra, Enric
dc.contributor.author	Canillas i Biosca, Adolf
dc.contributor.author	Campmany i Guillot, Josep, 1966-
dc.contributor.author	Serra-Miralles, J.
dc.contributor.author	Roch i Cunill, Carles
dc.contributor.author	Lloret, A.
dc.date	2012-10-09T09:10:41Z
dc.date	2012-10-09T09:10:41Z
dc.date	1992
dc.date	2012-10-09T09:10:41Z
dc.identifier.citation	0021-8979
dc.identifier.citation	060160
dc.identifier.uri	http://hdl.handle.net/2445/32236
dc.format	3 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351229
dc.relation	Journal of Applied Physics, 1992, vol. 71, num. 3, p. 1546-1548
dc.relation	http://dx.doi.org/10.1063/1.351229
dc.rights	(c) American Institute of Physics , 1992
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Semiconductors amorfs
dc.subject	Pel·lícules fines
dc.subject	Silici
dc.subject	Amorphous semiconductors
dc.subject	Thin films
dc.subject	Silicon
dc.title	Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges.
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	Hydrogenated amorphous silicon (a‐Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a‐Si:H from SQWM rf discharges through their influence on powder particle formation.

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