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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Andújar Bella, José Luis |
dc.contributor.author | Bertran Serra, Enric |
dc.contributor.author | Canillas i Biosca, Adolf |
dc.contributor.author | Campmany i Guillot, Josep, 1966- |
dc.contributor.author | Morenza Gil, José Luis |
dc.date | 2012-10-09T09:05:34Z |
dc.date | 2012-10-09T09:05:34Z |
dc.date | 1991 |
dc.date | 2012-10-09T09:05:34Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 058305 |
dc.identifier.uri | http://hdl.handle.net/2445/32235 |
dc.format | 3 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.348470 |
dc.relation | Journal of Applied Physics, 1991, vol. 69, num. 6, p. 3757-3759 |
dc.relation | http://dx.doi.org/10.1063/1.348470 |
dc.rights | (c) American Institute of Physics , 1991 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Pel·lícules fines |
dc.subject | Silici |
dc.subject | Semiconductors amorfs |
dc.subject | Thin films |
dc.subject | Silicon |
dc.subject | Amorphous semiconductors |
dc.title | Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |