On line monitoring of RF power amplifiers with embedded temperature sensors

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/16657

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	Altet Sanahujes, Josep
dc.contributor.author	Mateo Peña, Diego
dc.contributor.author	Gómez Salinas, Dídac
dc.date	2012
dc.identifier.citation	Altet, J.; Mateo, D.; Gómez, D. On line monitoring of RF power amplifiers with embedded temperature sensors. A: IEEE International On-Line Testing Symposium. "2012 IEEE 18th International On-Line Testing Symposium (IOLTS), Sitges, Spain, June 27-29, 2012". Sitges, Barcelona: IEEE, 2012, p. 1-5.
dc.identifier.citation	978-1-4673-2084-9
dc.identifier.uri	http://hdl.handle.net/2117/16657
dc.language.iso	eng
dc.publisher	IEEE
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Power amplifiers
dc.subject	Amplificadors (Electrònica)
dc.title	On line monitoring of RF power amplifiers with embedded temperature sensors
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.
dc.description.abstract	Peer Reviewed

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