On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	González Jiménez, José Luis
dc.contributor.author	Martineau, Baudouin
dc.contributor.author	Belot, Didier
dc.date	2012-05-17
dc.identifier.citation	González, J.; Martineau, B.; Belot, D. On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications. "Microelectronics journal", 17 Maig 2012, vol. 43, núm. 8, p. 582-591.
dc.identifier.citation	0026-2692
dc.identifier.citation	10.1016/j.mejo.2012.04.003
dc.identifier.uri	http://hdl.handle.net/2117/16133
dc.language.iso	eng
dc.relation	http://dx.doi.org/10.1016/j.mejo.2012.04.003
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Metal oxide semiconductors, Complementary
dc.subject	Metall-òxid-semiconductors complementaris
dc.title	On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	This paper presents a study of the effects of slottedmetallicplanes in passive structures built using CMOSprocesses for RF and millimeter-wave (mmW) applications. The impact of holes on the reference plane resistance and in the capacitance of any surrounding structure to the plane are investigated through electromagnetic (EM) simulations. Two analytical expressions are derived that capture the holes impact on the plane resistivity and on the dielectric constant of the materials found between the plane and the surroundings. These expressions are used to propose a simplified EM simulation methodology for on-chip microstrip transmission lines.
dc.description.abstract	Peer Reviewed

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