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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
dc.contributor.author | Berbel Artal, Néstor |
dc.contributor.author | Fernández García, Raúl |
dc.contributor.author | Gil Galí, Ignacio |
dc.contributor.author | Li, B. |
dc.contributor.author | Boyer, A. |
dc.contributor.author | BenDhia, S. |
dc.date | 2011-09-16 |
dc.identifier.citation | Berbel, N. [et al.]. Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout. "Microelectronics reliability", 16 Setembre 2011, vol. Volume 51, núm. Issue 9 - 11, p. 1564-1567. |
dc.identifier.citation | 0026-2714 |
dc.identifier.citation | 10.1016/j.microrel.2011.06.041 |
dc.identifier.uri | http://hdl.handle.net/2117/13917 |
dc.language.iso | eng |
dc.relation | http://www.sciencedirect.com/science/article/pii/S002627141100240X |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
dc.subject | Metal oxide semiconductor field-effect transistors |
dc.subject | Electromagnetism |
dc.subject | Electromagnetisme |
dc.title | Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout |
dc.type | info:eu-repo/semantics/submittedVersion |
dc.type | info:eu-repo/semantics/article |
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