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Title:
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Ring oscillator switching noise under NBTI wearout
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Author:
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Fernández García, Raúl; Gil Galí, Ignacio; Ruiz, José María; Morata Cariñena, Marta
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
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Abstract:
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In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
-Electromagnetic interference
-Metal oxide semiconductor field-effect transistors
-Switching circuits
-Metall-òxid-semiconductors
-Electromagnetisme |
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Rights:
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Document type:
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Article - Submitted version
Conference Object |
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