Electrical transport and impedance analysis of Au/porous silicon thin films

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/11958

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Fonthal, Faruk
dc.contributor.author	Goyes, C
dc.contributor.author	Rodríguez Martínez, Ángel
dc.date	2011
dc.identifier.citation	Fonthal, F.; Goyes, C.; Rodriguez, A. Electrical transport and impedance analysis of Au/porous silicon thin films. A: Electronics, Robotics and Automotive Mechanics Conference. "CERMA 2008". Cuernavaca: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 3-7.
dc.identifier.citation	978-0-7695-3320-9
dc.identifier.citation	10.1109/CERMA.2008.62
dc.identifier.uri	http://hdl.handle.net/2117/11958
dc.language.iso	eng
dc.publisher	IEEE Press. Institute of Electrical and Electronics Engineers
dc.relation	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4641038
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Electronic engineering
dc.subject	Porous Silicon
dc.subject	Electrochemical etching
dc.subject	Electrical conductivity
dc.subject	Electrical equivalent circuit
dc.subject	Metal-semiconductor-metal structure
dc.subject	Enginyeria electrònica
dc.title	Electrical transport and impedance analysis of Au/porous silicon thin films
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100> substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different sample

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