Title:
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Lithography aware regular cell design based on a predictive technology model
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Author:
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Gómez Fernández, Sergio; Moll Echeto, Francisco de Borja
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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As semiconductor technology advances into the
nanoscale era, optical effects such as channel narrowing, corner
rounding or line-end pullback are critical to accomplish circuit
yield specifications. It is well-demonstrated that layout regularity
reduces the increasing impact of process variations on circuit
performance and reliability. The purpose of this paper is to
present the layout design of a regular cell based on 1-D elements
which reduces lithography perturbations (ALARC). We depict
several undesirable lithography effects and how these effects
determine several layout parameters in order to achieve the
required line-pattern resolution. |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica -Metal oxide semiconductors, Complementary -Electronics -Integrated circuit layout -Electrònica |
Rights:
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Document type:
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Article - Published version Conference Object |
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